LASER GENERATION-AMPLIFICATION DEVICE Russian patent published in 1995 - IPC

Abstract RU 2046481 C1

FIELD: quantum electronics. SUBSTANCE: length F-2

of crystal LiF is chosen equal to l=P/τρ,, where P is average radiation power of laser; τ is transmission of output mirror determined from relation t=1 - To with To less/equal to 0.77 and τ= 0.23, with To greater than 0.77; To is initial transmission of crystal on radiation wave length of laser device; ρ=2.0-5.0 W/mm is specific power falling at unit of length of crystal. EFFECT: increase output power of device. 1 dwg

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RU 2 046 481 C1

Authors

Basiev T.T.

Kravets A.N.

Mirov S.B.

Osiko V.V.

Fedin A.V.

Dates

1995-10-20Published

1992-03-09Filed