HIGH POWER AMPLIFIER ON A CRYSTAL DOPED WITH RARE EARTH ELEMENTS, BASED ON A SUPERLOW QUANTUM DEFECTED INJECTION CIRCUIT USING SINGLE-MODE OR LOW-MODE FIBER LASERS Russian patent published in 2021 - IPC H01S3/67 

Abstract RU 2746445 C2

FIELD: laser amplifiers.

SUBSTANCE: group of inventions relates to ytterbium (Yb) volume amplifiers doped with rare earth elements of high power and high brightness. A high average and peak power laser system with a single transverse mode operates to deliver ultra-short single-mode pulses in the femsecond, picosecond or nanosecond range at peak power levels from kW to MW. The proposed system uses a MOPA (Master Oscillator-Power Amplifier) ​​structure containing a single-mode fiber pump source, which outputs a pulsed signal beam at or near 1030 nm, and a Yb crystal booster. The booster is characterized by end-to-end injection by means of an injection beam from a single-mode or low-mode continuous-mode fiber laser operating at a pump wavelength of 1000-1020 nm, with signal and pump wavelengths chosen to provide an ultra-low quantum defect of less than 3%.

EFFECT: increased brightness of the radiation source for pumping laser amplifiers based on crystals with a low quantum defect.

15 cl, 7 dwg

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RU 2 746 445 C2

Authors

Dergachev, Alex

Samartsev, Igor

Gapontsev, Valentin

Dates

2021-04-14Published

2017-12-01Filed