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2 046 843

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C1

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IPC

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Application

5057463/26, 1992-07-31

(22)

Actual filing date

1992-07-31

(45)

Published

1995-10-27

(72)

Inventor

Devjatykh G.G.Gavrishchuk E.M.Murskij G.L.Korshunov I.A.

(73)

Holder

Institut Khimii Vysokochistykh Veshchestv Ran

METHOD OF PRODUCING POLYCRYSTALLINE ZINC SELENIDE Russian patent published in 1995 - IPC

Abstract RU 2046843 C1

FIELD: chemical technology. SUBSTANCE: intermediate layer of zinc selenide is deposited on backing made of glass carbon heated up to 650-750 C for 5 hr at concentration of parental reagents 40-50 mole/m3, and the basic layer at concentration 20-26 mole/m3. Product is used in power IR-optics. EFFECT: improved method of producing. 1 tbl

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RU 2 046 843 C1

Authors

Devjatykh G.G.

Gavrishchuk E.M.

Murskij G.L.

Korshunov I.A.

Dates

1995-10-27—Published

1992-07-31—Filed

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