FIELD: optics for lasers and infrared devices. SUBSTANCE: polycrystalline zinc selenide is produced by depositing from gas phase during separate feeding of sprays of zinc vapor with argon mixture and hydrogen selenide with argon mixture, each of which is surrounded by protecting spray of inert gas. Sprays of hydrogen selenide and zinc are divided for "n" and "2n" parts, make ratio of the sprays equal to 1.5 - 1.8 and total spray of gas mixture equal to 690 - 750 cm3/min·dm2. Deposition is exercised on walls of square cross-section reactor, that has input flange, and along perimeter of the square with side of 2 L /3 - "2n" holes to feed mixture of zinc vapor with argon and along perimeter of the square with side of L / 3 - "n" holes to feed mixture of hydrogen selenide with argon with L - length of flange square side. Centers of symmetry of squares, along perimeters of which holes are located, coincide with center of flange symmetry. Around each of the holes Holes there are holes to feed protecting gas, located on concentric circumferences. EFFECT: increased production of zinc selenide. 2 cl, 2 dwg, 2 tbl
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Authors
Dates
1995-03-27—Published
1991-10-04—Filed