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(19)

(11)

2 636 091

(13)

(51)

IPC

C30B31/02(2006-01-01)

C30B33/02(2006-01-01)

C30B29/48(2006-01-01)

H01L21/04(2006-01-01)

H01S3/16(2006-01-01)

C30B25/02(2006-01-01)

(21) (22)

Application

2016115960, 2014-08-13

(24)

Start date

2014-08-13

(22)

Actual filing date

2014-08-13

(45)

Published

2017-11-20

(72)

Inventor

Balabanov Stanislav SergeevichGavrishchuk Evgenij MikhajlovichIkonnikov Vladimir BorisovichRodin Sergej AleksandrovichSavin Dmitrij Vyacheslavovich

(73)

Holder

Federalnoe Gosudarstvennoe Byudzhetnoe Uchrezhdenie Nauki Institut Khimii Vysokochistykh Veshchestv Im. G.G. Devyatykh Rossijskoj Akademii Nauk Ran)

METHOD FOR OBTAINING ZINC CHALKOGENIDES Russian patent published in 2017 - IPC C30B31/02 C30B33/02 C30B29/48 H01L21/04 H01S3/16 C30B25/02

Abstract RU 2636091 C1

FIELD: metallurgy.

SUBSTANCE: method comprises applying a film of alloying component of chromium 2-10 microns thick or 1 micron thick iron on the surface of zinc chalcogenid, forming a layer of the corresponding zinc chalcogenide on the film by chemical vapor deposition, and diffusion annealing of the resulting three-layer structure in argon at a pressure from 90 MPa to 200 MPa and temperature from 1100°C to 1350°C for 1-72 hours. Zinc chalcogenide is selenide or zinc sulphide.

EFFECT: surface of the obtained alloyed samples has an increased resistance to laser breakdown.

2 dwg, 2 ex

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RU 2 636 091 C1

Authors

Balabanov Stanislav Sergeevich

Gavrishchuk Evgenij Mikhajlovich

Ikonnikov Vladimir Borisovich

Rodin Sergej Aleksandrovich

Savin Dmitrij Vyacheslavovich

Dates

2017-11-20—Published

2014-08-13—Filed