FIELD: electric engineering. SUBSTANCE: device has regions of n-emitter, p-base, n-base, and p-emitter. Region of p- emitter is located in region of p-base. Anode is located in regions of n-emitter and p-base. Cathode is located in region of p-emitter. Cathode has transparent window where control electrode is located. Region with n-type of conductance is generated in region of p- emitter under region of transparent window. Region with p-type of conductance is generated in region of n-emitter under region of transparent window. EFFECT: increased functional capabilities. 5 cl, 3 dwg
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