SEMICONDUCTOR RECTIFIER MODULE Russian patent published in 1997 - IPC

FIELD: electrical engineering. SUBSTANCE: semiconductor rectifier cell is surrounded on side surface with semiconductor layer of first polarity of conductivity (side layer) separated from material of second polarity of conductivity with closed isolating groove crossing base p-n junction. Groove is made on side opposite to base plane. Anode and cathode groups of cells can be arranged on common insulating base carrying metal strips contacting common points of anode and cathode groups. Upper contacts are paired from one cathode and one anode components. Diodes, thyristors, triacs, optothyristors, or optotriacs may be used as rectifying cells. When diodes are used, external surface of groove is located on boundary between side, (say, hole) layer and source material. Groove may be offset relative to periphery. Diode cells may be mounted as separate components, as two monocrystal units for anode and cathode groups insulated by air gap, or as integrated circuits. In the latter case, anode and cathode groups are built on single chip with common side p-layer and chip is provided with two longitudinal isolating grooves whose external parts are located on boundary between common side p-layer and source material. In addition, side p-layer may have central insulating n-layer and chip may have upper and lower longitudinal isolating grooves whose bottom is located in central insulating n-layer. Thyristor controlled on anode side or that controlled on cathode side may be used as controlled semiconductor rectifying cell. EFFECT: improved design. 33 cl, 41 dwg