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2 034 370

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IPC

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Application

5026627/25, 1992-01-14

(22)

Actual filing date

1992-01-14

(45)

Published

1995-04-30

(72)

Inventor

Evseev Jurij Alekseevich[Ru]Rachinskij Ljubomir Jaroslavovich[Ua]Teter'Vova Natal'Ja Alekseevna[Ua]Seleninov Kazimir Leovich[Ee]

(73)

Holder

Evseev Jurij Alekseevich

SEMICONDUCTOR GATING DEVICE Russian patent published in 1995 - IPC

Abstract RU 2034370 C1

FIELD: semiconductor devices. SUBSTANCE: device is multilayer structure with alternating region of both polarities of conductivity. Through-type n region embraces structure on side surfaces. Through-type region is isolated from n-emitter and p-base regions by closed isolating groove. EFFECT: enlarged functional capabilities. 3 cl, 3 dwg

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RU 2 034 370 C1

Authors

Evseev Jurij Alekseevich[Ru]

Rachinskij Ljubomir Jaroslavovich[Ua]

Teter'Vova Natal'Ja Alekseevna[Ua]

Seleninov Kazimir Leovich[Ee]

Dates

1995-04-30—Published

1992-01-14—Filed

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