SEMICONDUCTOR SWITCHING INSTRUMENT Russian patent published in 1996 - IPC

FIELD: microelectronics. SUBSTANCE: device has semiconductor structure with at least three p-n junctions, which are shaped by base areas, as well as base and corresponding emitter areas with main and control electrodes. At least one groove is made in place between electrodes where they go on semiconductor surface. Width of groove is less than distance between main and control electrodes. It may be displaced towards area of p-type conductance. Depth of groove may be in range of 0.25-0.5 with respect to depth of emitter junction that is closest to control electrode. Groove width may be greater than width of layer of three-dimensional charge of an emitter junction that is closest to control electrode when reverse voltage at control electrode is maximal. Width of groove in n- and p-type areas is greater than width of three-dimensional charge in corresponding area. EFFECT: increased functional capabilities. 4 cl, 2 dwg