MEMORY LOCATION Russian patent published in 1995 - IPC

Abstract RU 2050582 C1

FIELD: memory devices. SUBSTANCE: photodetector and second light source are introduced to each flip-flop of memory location. This results in possibility of parallel conversion of digital signals, which are stored in memory, to flow of optical analog signals. EFFECT: increased functional capabilities, increased speed. 1 dwg

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RU 2 050 582 C1

Authors

Lavrenjuk A.F.

Dates

1995-12-20Published

1991-03-15Filed