PHOTODETECTOR INTEGRAL MEMORY LOCATION Russian patent published in 1995 - IPC

Abstract RU 2050600 C1

FIELD: technical physics. SUBSTANCE: gate balancing transistors and gate recording transistor are introduced to accomplish the goal of invention. EFFECT: increased threshold sensitivity. 1 dwg

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RU 2 050 600 C1

Authors

Pankov B.N.

Dates

1995-12-20—Published

1992-12-18—Filed