PHOTORECEIVING INTEGRAL MEMORY CELL Russian patent published in 1995 - IPC

Abstract RU 2043665 C1

FIELD: electro-optics. SUBSTANCE: memorizing capacitors are introduced between outputs of differential amplifier and inputs of trigger-lock at each step of operation of the cell by means of erasure MOP-transistors and additional MOP-transistors. The transistors compensate influence of asymmetry of threshold voltages of input amplifying transistors of trigger-lock on threshold sensitivity of the cell. EFFECT: improved threshold sensitivity. 1 dwg

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RU 2 043 665 C1

Authors

Pankov B.N.

Dates

1995-09-10—Published

1993-01-15—Filed