INTEGRATING HIGH-FREQUENCY AMPLIFIER Russian patent published in 1997 - IPC

FIELD: radio receivers of various applications. SUBSTANCE: for stabilizing the voltage gain under the effect of special factors within the temperature range the integrating high- frequency amplifier, having a preamplifier stage and a final amplifier stage, whose transistor collector is connected to a low-pass filter via a load resistor and to the base of the same transistor and to the collector of the transistor of the preamplifier stage via a negative feedback resistor, uses a control element employing a transistor, whose collector is connected to the base of the transistor of the preamplifier stage, a resistor is cut in between the emitter and common base, and a resistance voltage divider - in the base circuit that is connected to the low-pass filter, a power source; the relation between the value of the resistor in the emitter circuit of the control stage transistor and the value of parallel-connected resistors in its base circuit is selected within 0.005 to 0.05. EFFECT: enhanced stabilization. 2 dwg