SEMICONDUCTOR PRESSURE TRANSDUCER Russian patent published in 1997 - IPC

FIELD: semiconductor transducers, applicable for pressure measurement. SUBSTANCE: in pressure transducer, using a membrane with rigid center 5 and reinforced peripheral part 6, stiffening member in the form of closed additional lug 4, and resistance strain gauges 7 ($$$), the membrane, rigid center 5, reinforced peripheral part 6 and additional lug 4 are square-shaped, each resistance strain gauge 7 is made in the form of series-connected resistive sections positioned on the membrane both in tangential and radial directions; resistive sections of the pair of resistance strain gauges with a positive sensitivity are located respectively along the sides of peripheral contour 8 of the membrane and additional lug 4 and perpendicularly to the sides of additional lug 4 and rigid center 5, and resistive sections of the pair of resistance strain gauges with a negative sensitivity are located respectively perpendicularly to the sides of peripheral contour 8 of the membrane and additional lug 4 and along the sides of additional lug 4 and rigid center 5; membrane thickness $$$ and additional lug thickness $$$ satisfy relation $$$. EFFECT: enhanced accuracy of measurement and improved adaptability to manufacture. 1 dwg