SEMICONDUCTOR PRESSURE TRANSDUCER Russian patent published in 1995 - IPC

FIELD: measurement technology. SUBSTANCE: semiconductor pressure transducer has flexible semiconductor member with supporting base over perimeter and shaped diaphragm whose configuration is made on two sides and which has on nonplanar side thickened rigid center and stiffening elements arranged symmetrically in center of diaphragm and relative to center on longitudinal axis of diaphragm, at its periphery, and resistance strain gages of bridge circuit placed on planar side of diaphragm; stiffening elements of definite geometric dimensions are also provided on transverse symmetry axis of diaphragm. Each resistance strain gage is made in the form of four series-connected similar resistive sections. Resistive sections of pair of strain gages of positive sensitivity are arranged, respectively, on stiffening ribs symmetrically in respect to center of stiffening element and perpendicular to inner outline of diaphragm; resistive sections of pair of strain gages of negative sensitivity are placed, respectively, on stiffening ribs symmetrically in respect to center of stiffening element and perpendicular to outer outline of diaphragm and to stiffening elements. Geometric characteristics of diaphragm, stiffening ribs, and stiffening elements meet definite relations. EFFECT: improved accuracy due to raising output signal of metering circuit; facilitated manufacture. 1 dwg