FIELD: instruments. SUBSTANCE: method involves measuring of distribution of local density of reverse saturation current j(x) along sensitive element which is designed as extended three-layer semiconductor p-n-p+ or n-p-n+ structure which length is equal to L. Ends of - (or n) layer are connected to power supply of direct electric voltage E; additional source of electric voltage U is connected between ends of p (or n) and p+ (or n+) layers. Variation of voltage U in range of 0 ≅ U ≅ E, provides dependency of current I(U) on voltage U. This dependency is used for measurement of distribution of local density of reverse saturation current j(x) along sensitive element. Said distribution j(x) and dependency of local density of reverse current j=F(ψ) on level of measured physical field ψ provides data about three-dimensional distribution of physical field j(x) along sensitive element. Latter dependency is preliminary measured in experiment or calculated using known equations. EFFECT: possibility to measure temperature, mechanical tension, magnetic and other fields which cause change of reverse current of p-n junction. 2 cl, 5 dwg
