FIELD: measurement technology. SUBSTANCE: spatial distribution of flow velocity V(x) is determined by single long semiconductor thermal element. Measurement technique is based on dependence between heat loss of thermal element built around three-layer p-n-p or n-p-n structure of length L which is continuously heated by DC current JH and speed of liquid or gas wherein thermal element is placed. Heating DC current JH is passed through p or n layer from voltage supply E connected to two leads of p or n layer and voltage U is applied between one of p or n layer leads and p or n layer. I(U) as function of is measured and this function is used to determine distribution of local density of reverse saturation current j(x) along thermal element. Distribution V(x) is found from j(x) distribution and from pre-determined j(V) dependence which is density of reverse saturation current as function flow velocity. EFFECT: improved measurement accuracy. 6 dwg
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Authors
Dates
1998-12-20—Published
1993-09-10—Filed