DISTRIBUTED-PARAMETER RC FILM STRUCTURE Russian patent published in 1999 - IPC

Abstract RU 2140679 C1

FIELD: microelectronics. SUBSTANCE: phase-response RC film structure designed for developing frequency-selective and frequency-independent devices such as broad-band phase shifters and attenuators has tetragonal bottom plate 2 in the form of resistive material layer with contact pads 3, 4 abutting against two adjacent sides, insulation 5, and top plate 6 with contact pad 7 all sequentially deposited on insulating substrate 1; bottom plate 2 protrudes beyond top plate 6 on two adjacent sides 8 with contact pads abutting against them. EFFECT: enlarged functional capabilities; constant phase shift and voltage transfer ratio. 4 dwg

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RU 2 140 679 C1

Authors

Gil'Mutdinov A.Kh.

Kamaletdinov A.G.

Dates

1999-10-27Published

1997-06-10Filed