FIELD: crystal growing. SUBSTANCE: invention may find use in production of semiconductor crystals appropriate for temperature range from +50 to -50 C utilized as working elements of thermoelectric microrefrigerators. Bismuth telluride-based microhomogeneous crystals are grown using zone melting technique in horizontal boats under excessive pressure of protective gas medium, in which procedure, excess material in melting zone is present corresponding in respect to its makeup to charge material, along which this excess material is displaced toward crystallization zone. EFFECT: improved procedure. 4 dwg
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