FIELD: electricity.
SUBSTANCE: invention is referred to manufacturing of semiconductor materials, in particular to manufacturing of thermoelectric binary alloys of bismuth-antimony type used for manufacturing of variband semiconductors for thermoelectric elements in small-size Peltier refrigerators operating within range of temperature of 100-200 K. The method for manufacturing long ingot with uniform cross-section out of thermoelectric binary alloys of bismuth-antimony type includes melting and crystallization of ingot, at that direct crystallization is performed with rate of 20-30 mm/h, then single zone melting is performed in reverse direction with rate of 0.2-0.5 mm/h at width of zone equal to 0.15-0.30 of the ingot length.
EFFECT: improved thermoelectric Q-factor for alloys in magnetic field and without it by creating concentration of the alloy components close to linear distribution along the length of obtained ingot.
1 dwg, 1 ex
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