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2 088 587

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Application

94021161/04, 1994-06-07

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Actual filing date

1994-06-07

(45)

Published

1997-08-27

(72)

Inventor

Chernyshev E.A.Lebedev E.N.Belov E.P.Komalenkova N.G.Kleshchevnikova S.I.Eliseeva L.E.Tagachenkov A.A.Korneev N.N.

(73)

Holder

Gosudarstvennyj Nauchno-Issledovatel'Skij Institut Khimii I Tekhnologii Ehlementoorganicheskikh Soedinenij

METHOD OF SYNTHESIS OF HEXAETHOXYSILANE Russian patent published in 1997 - IPC

Abstract RU 2088587 C1

FIELD: chemical technology. SUBSTANCE: invention relates to methods of synthesis of organosilicon monomers, in part, synthesis of hexaethoxydisilane of the formula Si2(OC2H5)6. This compound can be hydrolyzed by linkage Si-OC2H5 and ruptured by the linkage Si-Si. Method of synthesis of hexaethoxysilane involves interaction of triethoxychlorosilane with sodium. Sodium is used as suspension in triethoxychlorosilane or in tetraethoxysilane or in their mixture or as thin film applied on neutral carriers. EFFECT: improved method of synthesis, high purity of disilane.

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RU 2 088 587 C1

Authors

Chernyshev E.A.

Lebedev E.N.

Belov E.P.

Komalenkova N.G.

Kleshchevnikova S.I.

Eliseeva L.E.

Tagachenkov A.A.

Korneev N.N.

Dates

1997-08-27—Published

1994-06-07—Filed

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