METHOD OF SILICON HYDRIDE PRODUCING Russian patent published in 1997 - IPC

FIELD: inorganic chemistry and technology. SUBSTANCE: method involves interaction of hexaethoxydisilane with alkylaluminium hydride that is carried out in the presence of aluminium alkoxy-derivative or alkylaluminooxane at amount 0.1-10% of the parent alkylaluminium hydride mass. The source of aluminium alkoxy-derivative is compound of the formula R_3-nAl(OR′)_n where n = 1, 2, 3; R, R' are similar or different alkyl groups C₂H₅, i-C₄H₉. The source of alkylaluminooxane is compound of the formula R_4-n(R′O)_nAl₂O where R, R' are similar or different alkyl groups C₂H₅, i-C₄H₉ and n = 1, 2, 3, 4. Method can be used for disilane production that is used for semiconductor making. EFFECT: increased yield of disilane, decreased consumption, improved ecology. 3 cl, 1 tbl