METHOD OF REMOVING IMPURITIES FROM SILICON MELT Russian patent published in 1997 - IPC

Abstract RU 2098354 C1

FIELD: silicon production. SUBSTANCE: invention relates to removing impurities from silicon melt by way of treating silicon melt placed in vessel with slag capable to remove impurities, in particular, boron. Slag is continuously added to melt and simultaneously inactivated or removed from melt as soon as equilibrium between slag and silicon melt regarding impurities is achieved. EFFECT: simplified process and reduced cost. 10 cl, 2 dwg

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RU 2 098 354 C1

Authors

Anders Sshej[No]

Dates

1997-12-10Published

1995-08-31Filed