RADIO-FREQUENCY PIEZOELECTRIC ELEMENT Russian patent published in 1997 - IPC

Abstract RU 2099858 C1

FIELD: piezoelectronics, applicable in production of piezoelectric elements for RF piezoelectric resonators and monolithic filters. SUBSTANCE: RF piezoelectric element of the back-type mesa- structure is made of a single-crystal wafer in the form of a thinned central part with a thicker shoulder surrounding it; the shoulder is made with a rupture, whose width makes up 20 to 400 thickness of the thinned part of the piezoelectric element. EFFECT: improved design. 4 dwg

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RU 2 099 858 C1

Authors

Martynenko O.E.

Dzyba S.I.

Kalandadze D.I.

Dates

1997-12-20Published

1995-11-10Filed