HIGH-FREQUENCY PIEZOID Russian patent published in 2004 - IPC

Abstract RU 2234186 C1

FIELD: radio-electronics; piezoelectronic industry.

SUBSTANCE: proposed high-frequency piezoid designed for use in manufacturing oscillators, filters, and other volume acoustic wave devices operating in frequency band of 50 to 1000 MHz is distinguished by open-type inverted mesa layout. Piezoid is made in the form of shaped monolithic piezoelectric wafer with thinned vibrating region. Wafer is polyhedral in shape having vertical T- or L-section, its active region being confined in crystallographic planes (XZ).

EFFECT: enhanced electrophysical parameters and minimized size of devices built around proposed piezoid.

2 cl, 3 dwg

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RU 2 234 186 C1

Authors

Matsak A.N.

Gruzinenko V.B.

Dates

2004-08-10Published

2003-04-24Filed