FIELD: electronic engineering. SUBSTANCE: device structures are irradiated on the side of high-resistance region opposite to side adjacent to interlocking p-n junction through mask with hole in the form of truncated cone with lower base diameter of 180-220 mcm, diameter of upper base of 80-120 mcm located at distance of 400-700 mcm. Material and thickness of mask provide for irradiation of protected sections by electrons of 330-370 keV energy. EFFECT: more effective manufacturing process. 5 dwg, 7 tbl
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