FIELD: semiconductor engineering. SUBSTANCE: method includes structure illumination by light pulse whose quantum energy is higher than semiconductor forbidden gap width and microwave measurement of structure nonequilibrium conductance relaxation. Nondestructive contacts are formed in structure, bias voltage is applied to structure and the latter is illuminated on substrate side, light is turned off, and conductance relaxation time constant is recorded and used to determine concentration of holes. EFFECT: enlarged functional capability and informative capacity of method due to determining concentration of holes in buffer layer of standard multilayer structures used for manufacturing integrated circuits and field-effect transistors. 4 dwg
