FIELD: radio engineering. SUBSTANCE: device has input setting circuits and output amplifying circuits, matrix of commutation gates which use field-effect transistors. In addition device has commutation gates with relatively high transmission resistance. Output amplifying circuits have one avalanche circuit, comparison unit which operates using hysteresis loop, and flipping D circuit, as well as keeping memory unit and switch through which keeping memory unit is recharged during preliminary commutation phase of binary bits. Keeping memory unit is recharged up to instantaneous potential level at piece of output line which runs from commutation gate. Then this potential level is kept at second input of comparison unit till next switching phase. EFFECT: increased functional capabilities. 3 cl, 3 dwg
Title | Year | Author | Number |
---|---|---|---|
COMMUTATOR FOR WIDE-BAND SIGNALS | 1989 |
|
RU2106755C1 |
WIDE-BAND SIGNALS COMMUNICATION DEVICE | 1990 |
|
RU2013877C1 |
BROAD-BAND SWITCHING DEVICE | 1991 |
|
RU2103841C1 |
DEVICE FOR COMMUTATION OF BROADBAND SIGNALS | 1990 |
|
RU2103832C1 |
DEVICE FOR COMMUTATION OF WIDE-BAND SIGNALS | 0 |
|
SU1838888A3 |
WIDE-BAND SIGNAL SPATIAL COMMUTATION DEVICE | 1986 |
|
RU2011304C1 |
BROADBAND SIGNAL SWITCHING DEVICE | 1990 |
|
RU2105430C1 |
DEVICE FOR SWITCHING WIDE-BAND SIGNALS | 0 |
|
SU1738105A3 |
BROADBAND SIGNAL SWITCHING DEVICE | 1991 |
|
RU2105431C1 |
BROAD-BAND SIGNAL SWITCHING DEVICE | 1986 |
|
RU2098922C1 |
Authors
Dates
1998-02-20—Published
1987-06-09—Filed