PRECISION INTEGRATED POLYSILICON RESISTOR AND PROCESS OF ITS MANUFACTURE Russian patent published in 1998 - IPC

Abstract RU 2110871 C1

FIELD: design of precision integrated polysilicon resistors used in analog and analog-to-digital integrated circuits. SUBSTANCE: precision of reconstruction of resistors and ratio of resistances of integrated polysilicon resistors is achieved thanks to screening of resistive polysilicon from substrate by local screens of conductive material, elimination of dependence of resistance of resistors on voltage between resistor and substrate, including dependence of supply voltage on integrated circuits and improvement of time stability of resistors. EFFECT: facilitated manufacture of precision integrated polysilicon resistors. 9 cl, 4 dwg

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RU 2 110 871 C1

Authors

Agrich Jurij Vladimirovich

Dates

1998-05-10Published

1996-07-16Filed