FIELD: industrial inorganic syntheses. SUBSTANCE: to exhausted etching solution, 1-2 wt % (based on weight of silicon oxide contained in etching solution) of polydimethyldiallylammonium fluoride is added. Resulting solution is filtered to remove precipitate and subjected to oxidative thermal decomposition. EFFECT: improved procedure.
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Authors
Dates
1998-06-20—Published
1993-08-30—Filed