METHOD OF EXAMINATION OF PLANAR OPTICAL WAVEGUIDE Russian patent published in 1998 - IPC

Abstract RU 2120118 C1

FIELD: examination of parameters of thin dielectric films. SUBSTANCE: method includes formation of optical contact area between waveguide surface and coupling element made of two or more interconnected parts insulated optically from each other. Method also includes removal of radiation from waveguide, measurement of angular distribution of intensity of radiation passed through waveguide, and calculation of waveguide parameters by angular distribution. EFFECT: enhanced accuracy of measurements. 1 dwg

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RU 2 120 118 C1

Authors

Katin M.V.

Stoletov I.S.

Korzh I.A.

Dates

1998-10-10Published

1990-10-29Filed