SEMICONDUCTIVE TEMPERATURE PICKUP Russian patent published in 1998 - IPC

Abstract RU 2122713 C1

FIELD: systems for automatic control of manufacturing processes. SUBSTANCE: temperature pickup includes two sources 1,10 of direct current voltage, two temperature-sensitive diodes 2,7, two field-effect transistors 4,5, two limiting resistors 3,6. Sources of field effect transistors are mutually connected. Drains of field effect transistors are connected in parallel with circuit including inductance coil and capacitor. At heating impedance of temperature-sensitive diodes 2,7 and capacitive component of impedance of outlets "drain-drain" of field effect transistors are changed, and it causes change of resonance frequency of oscillation circuit. EFFECT: enhanced accuracy of temperature measuring. 1 dwg

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RU 2 122 713 C1

Authors

Osadchuk Vladimir Stepanovich

Osadchuk Elena Vladimirovna

Osadchuk Aleksandr Vladimirovich

Dates

1998-11-27Published

1995-08-08Filed