DEVICE FOR GROWING PROFILED CRYSTALS FROM SOLUTION Russian patent published in 1999 - IPC

FIELD: crystal growing from aqueous solutions; may be used in accelerated growing of single crystals of preset shape and crystallographic orientation, for example, crystals of potassium dehydrophosphste group. SUBSTANCE: crystal growing chamber installed on rod inside crystallizer filled with salt solution and is made so that internal sizes of its longitudinal walls parallel to plane of pumping of immersion pump with nozzle are governed by size of grown crystal aperture; and width of transverse walls is determined by crystal required thickness. In this case, upper edges of chamber longitudinal walls and lower edges of nozzle longitudinal walls are made in the form of arcs of circumferences with respective radii R₁ and R₂ related by relation 0.1 mm ≤ R₁-R₂≤ 3 mm. Each pair of circumferences with radii R₁ and R₂ has its center located on axis of pump pumping, and lateral size of nozzle is selected equal to width of transverse walls of chamber. The device provides for growing of profiled high-quality single crystals of large aperture and small thickness with any required orientation of crystallographic axes. EFFECT: higher efficiency. 2 cl, 1 dwg