THERMISTOR-TYPE SEMICONDUCTOR TRANSDUCER Russian patent published in 2000 - IPC

FIELD: measurement technology; temperature sensors sending DC current and voltage signals. SUBSTANCE: transducer has single- crystalline sapphire substrate carrying thermistor of single- crystalline silicon layer. Other side of sapphire substrate is connected to titanium alloy base. Heat-independent resistor is connected in parallel with thermistor and installed on same surface of sapphire substrate. With adequately chosen concentration of current carriers in single-crystalline silicon thermistor and resistance value of heat-independent resistor, high-accuracy linearization of transducer performance characteristic is ensured within comprehensive temperature range of -200 to +500 C. EFFECT: improved accuracy and calibration characteristic linearity of transducer. 3 cl, 4 dwg