SEMICONDUCTOR STRAIN-GAGE TRANSDUCER Russian patent published in 2006 - IPC H01L29/84 

FIELD: measurement technology; mechanical quantity transducers.

SUBSTANCE: proposed strain-gage transducer that depends for its operation on tensoresistive effect and is characterized in unified calibration characteristic has strain measurement bridge circuit with shunt resistor connected across its diagonally opposite power terminals. Strain measurement bridge circuit arms and shunt resistor have jumpers whose opening affords adjustment of initial signal and output-signal measurement range of strain-gage transducer. All components of strain measurement circuit are formed using photo-lithography method on sapphire substrate from heteroepitaxial layer of single-crystalline silicon having hole concentration of (3.5-9)10¹⁹ cm^-3.

EFFECT: reduced measurement error, enhanced reliability, and facilitated adjustment of strain-gage transducers.

2 cl, 2 dwg