FIELD: production of change for growing monocrystals of lanthanum gallic silicate. SUBSTANCE: starting components: lanthanum oxide, gallium oxide and silicon oxide weighed in rated stoichiometric relationship are mixed in polyethylene can placed in tumbler-type mixer. Mixture of oxides thus obtained is poured into alundum crucible, namely in space between its inner walls and alundum rod mounted in center portion of crucible. Diameter of alundum crucible is selected to be equal to diameter of iridium crucible used for further growing of monocrystals from charge. Sintering is effected at temperature of 1400 C for 4 hours. EFFECT: reduction of preliminary operations; production of profiled tablets of required mass and sizes for fully filling volume of iridium crucible in growing monocrystals; avoidance of violation of stoichiometry of melt.
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Authors
Dates
2000-03-27—Published
1998-05-13—Filed