GROWING GALLIUM-LANTHANUM SILICATE MONOCRYSTALS USING CZOCHRALSKI METHOD Russian patent published in 2000 - IPC

Abstract RU 2147632 C1

FIELD: piezoelectric resonators, radio communication filters, and other volume-wave and surface-acoustic- wave devices. SUBSTANCE: fusing, etching, and growing processes are combined in single cycle for growing gallium-lanthanum silicate from iridium crucible. To this end, solid-phase fused and shaped pellets of gallium-lanthanum silicate charge of mass required to fill up entire space of iridium crucible are assembled to form hollow cylinder with crystal holder passed along its center line with seed used as guide. Then charge is fused; process includes dropping pellets over crystal holder to crucible as lower layers of charge are fused up, seeding, drawing out the monocrystal, and cooling down to room temperature. Such process provides for reducing argon and oxygen consumption for each fusing cycle by three or four times. EFFECT: reduced number of pre-operations and consumption of argon and oxygen. 1 ex

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RU 2 147 632 C1

Authors

Dorogovin B.A.

Stepanov S.Ju.

Tsegleev A.A.

Lapteva G.A.

Dubovskij A.B.

Gorokhov V.P.

Tsareva N.B.

Kurochkin V.I.

Dates

2000-04-20Published

1998-05-13Filed