FIELD: chemical technology, in particular batch for growth of gallosilicates.
SUBSTANCE: invention relates to new class of ordered four-component gallosilicate compounds with calcium gallogermanate structure (Ca3Ga2Ge4O14) useful for piezoelectric technique. Claimed method for solid-phase synthesis includes: mixing of heat pretreated oxides of elements comprising in grown single crystal of formula Sr3MeGa3Si2O14, where Me is niobium or tantalum, in stoichiometric relationship and caking of mix obtained at temperature of 84-85% in respect to synthesis temperature of corresponding crystals.
EFFECT: batch in compact (profiled tablet) form; single crystal gallosilicates of high quality.
2 ex, 1 tbl
Title | Year | Author | Number |
---|---|---|---|
PROCESS OF PREPARATION OF MIXTURE TO GROW MONOCRYSTALS OF GALLOSILICATES WITH STRUCTURE OF CALCIUM GALLOGERMANATE | 2001 |
|
RU2194808C1 |
MONOCRYSTAL WITH CALCIUM GALLOGERMANATE STRUCTURE FOR MANUFACTURE OF DISKS IN DEVICES ON SURFACE-ACOUSTIC WAVES AND METHOD OF PRODUCTION OF SUCH CRYSTAL | 2003 |
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RU2250938C1 |
MONOCRYSTAL FOR MANUFACTURE OF DISKS IN SURFACE ACOUSTIC WAVE DEVICES AND METHOD OF OBTAINING MONOCRYSTAL | 2000 |
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METHOD OF PRODUCTION OF CHARGE FOR GROWING MONOCRYSTALS ON BASE OF OXIDES OF RARE-EARTH METALS, TRACE METALS AND REFRACTORY METALS OR SILICON | 2005 |
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RU2296824C1 |
METHOD OF SOLID-PHASE SYNTHESIS OF MIXTURE FOR GROWING OF SINGLE CRYSTALS OF LANTHANUM-GALLIUM NIOBATE (LaGaNbO) | 2000 |
|
RU2160796C1 |
METHOD OF SOLID-PHASE SYNTHESIS OF MIXTURE FOR GROWING OF SINGLE CRYSTALS OF LANTHANUM-GALLIUM TANTALATE (LaGaTaO) | 2000 |
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RU2160797C1 |
METHOD OF PREPARING CHARGE FOR GROWING LANTHANUM-GALLIUM SILICATE MONOCRYSTALS | 1998 |
|
RU2156326C2 |
METHOD OF SOLID-PHASE SYNTHESIS OF CHARGE FOR GROWING MONOCRYSTALS OF LANTHANUM GALLIC SILICATE | 1998 |
|
RU2147048C1 |
METHOD FOR PRODUCTION OF BATCH FOR WURTZITE-STRUCTURE SINGLE CRYSTAL GROWTH | 2003 |
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RU2249063C1 |
METHOD OF GROWING COMPLEX RARE-EARTH GALLIUM-CONTAINING OXIDES | 1998 |
|
RU2152462C1 |
Authors
Dates
2004-12-10—Published
2003-01-31—Filed