METHOD OF PRODUCING LEAD-TUNGSTATE SCINTILLATION SINGLE CRYSTAL Russian patent published in 2001 - IPC

FIELD: methods of crystal production, particularly, methods of production of lead-tungstate single crystals; applicable in manufacture of scintillation members used in detectors of high-energy ionizing radiations operating under conditions of high dose loads in registration circuits requiring high time resolution. SUBSTANCE: PWO single crystal is produced by Czochralski method on seed oriented at an angle up to 10 deg to crystallographic axis "a" under conditions of suppression of oxidation of crystal-forming ions and stoichiometrization of melt and alloying with admixtures of lanthanum, yttrium and niobium in amount of 0.001-0.1 wt.%, and admixture of molybdenum in the form of PbMoO₄ in amount to obtain molybdenum content in finished crystal of 0.01-0.1 wt.%. Scintillation single crystal of lead-tungstate produced of proposed method possesses high service properties such as increased light output of scintillations and luminescence spectrum displaced to green region relative to material described in prototype that extends the field of its application. Scintillation single crystal may be used for registration and spectrometry of particles and quanta in devices of physics of high, medium and low energies (above 100 MeV), particularly, in detectors of electromagnetic calorimeters of colliders, positron emission tomography using time-of-flight method of registration. EFFECT: higher efficiency. 1 tbl, 1 ex