LASER DIODE STRIP Russian patent published in 2001 - IPC

FIELD: semiconductor lasers ; fiber-optic communications, medicine, material treatment. SUBSTANCE: laser diode strip whose external end is covered with antireflective coating and rear blind end covered with highly reflective coating has laser diodes, cylindrical microlens, and flat external mirror; transversely directed multimode wide-aperture (S > 50) laser diodes are used in strip; their mode of operation is changed from inherent multimode to transversely directed single-mode operation in external resonator where laser diodes are synchronized due to diffraction transmission during reflection from flat external mirror. Entire radiation energy is concentrated in central peak due to using ability of Gaussian beam to change curvature of its wavefront and its cross-sectional dimensions when propagating in free space as well as ability of positive lens to transfer constriction of Gaussian beam from front focal plane to rear one; as a result constriction size is smaller than angular direction to first diffraction beam which suppresses its intensity as well as intensity of higher-order peaks due to interference of laser diode fields causing concentration of entire radiation energy in single (central) peak. EFFECT: provision for concentrating entire radiation energy in single peak with diffraction-limited divergence of strip in focal plane of lens. 6 dwg