LASER DIODE STRIP Russian patent published in 2001 - IPC

FIELD: semiconductor lasers; fiber-optic communications, medicine, and material treatment. SUBSTANCE: laser diode strip whose external end is covered with antireflective coating and rear blind end, with highly reflective coating has laser diodes, cylindrical microlens, and flat external mirror; transversely directed multimode wide- aperture (S > 50 mcm) laser diodes are used in strip their mode of operation being changed from inherent multimode to transversely directed single-mode operation in external resonator. The latter provides for selection of main mode incorporating provision for transverse Gaussian distribution for single wide-aperture laser diode and selection of supermodes for phased-out strip. Dual mode selection of laser diodes provides for raising radiation power of laser diode strip in common mode of operation at the same time maintaining refraction limit of divergence suited to synthesized aperture. EFFECT: enhanced radiation power of strip in common-mode operation with same diffraction limit of divergence. 5 dwg