TRANSISTOR SWITCH Russian patent published in 2001 - IPC

FIELD: electrical engineering; integrated-circuit contact-transistor systems for ignition systems of vehicles. SUBSTANCE: transistor switch is provided with (n - 1) power transistors whose power leads are connected to respective ones of first power transistor, n blocking diodes whose first leads are connected to multiplexed first leads of pulse transformer primary and secondary windings and second leads, to bases of respective power transistors incorporated in transistor switch whose first power leads are connected to input lead and second ones, to power transistor bases through respective current- setting resistors; their control leads are connected to respective outputs of pulse distributor. So several power transistors are operating in turn during time intervals set by time characteristics of pulse distributor which enables uniform distribution of power dissipated among transistors and eliminates their overheating. EFFECT: improved reliability of switch. 3 dwg