SILICON ISOTOPES SEPARATION PROCESS Russian patent published in 2001 - IPC

Abstract RU 2172642 C1

FIELD: semiconductor engineering. SUBSTANCE: trichlorosilane and tetrachlorosilane are centrifuged in gas phase. Light fraction enriched with Si-28 isotope is collected at separation plant outlet. Desired isotope in the form of ²⁸SiHCl₃ or ²⁸SiCl₄ is further purified and reduced to produce elementary silicon. Process requires no additional apparatuses and can be realized on available equipment. EFFECT: enlarged resource of raw material and improved operation conditions due to elimination of corrosive fluorine compounds. 3 cl, 1 dwg, 2 ex

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RU 2 172 642 C1

Authors

Tikhomirov A.V.

Dates

2001-08-27—Published

2000-04-21—Filed