METHOD OF PRODUCTION OF GERMANIUM FOR SEMICONDUCTING MATERIALS Russian patent published in 2006 - IPC B01D59/20 C01G17/04 

FIELD: chemical industry, electronic industry; methods of manufacture semiconducting materials for production of detectors of radiation, photodetectors and other semiconductor devices.

SUBSTANCE: the invention is pertaining to the field of production of germanium for manufacture of semiconducting materials and may be used in chemical industry and electronic industry for production of detectors of radiation, photodetectors and other semiconductor devices. The source mixture containing germanium tetrachloride is fed to the gaseous centrifuging. Then they extract germanium tetrachloride enriched with the target isotope and transform it into the volatile compound having - germanium tetrafluoride or german. After that germanium tetrafluoride is directed to repeated enrichment by the gaseous centrifuging for the further concentration of the target isotope. The invention ensures an increased level of concentration of the target isotope of germanium.

EFFECT: the invention ensures an increased level of concentration of the target isotope of germanium.

2 ex, 2 tbl