FACILITY FOR PLASMA-CHEMICAL TREATMENT OF ELECTRONIC DEVICES Russian patent published in 2001 - IPC

FIELD: vacuum technology for producing solid-state, vacuum, and gas-discharge devices and for pumping gas-discharge lasers. SUBSTANCE: facility has high-frequency energy source which is, essentially, distributed-gain amplifier, and a number of process components which are spaced apart and incorporate current-conducting electrodes in the form of capacitor plates one of whose terminals is connected to output of respective low-frequency filter incorporated in anode line of distributed-gain amplifier and other terminal is connected to common conductor. Output terminals of anode line are connected to input terminals of feedback two-port that has a number of series-connected low- frequency filters; output of feedback two-port is connected to grid-line input terminals of distributed-gain amplifier. Components of low-frequency filters incorporated in anode line of distributed-gain amplifier and in feedback two-port are chosen so as to ensure amplitude-phase conditions for producing polyharmonic self- excited oscillations. EFFECT: reduced cost and power requirement, enhanced efficiency. 2 dwg