FACILITY FOR PLASMA-CHEMICAL TREATMENT OF ELECTRONIC DEVICES Russian patent published in 2001 - IPC

FIELD: vacuum technology; manufacture of solid-state, vacuum, and gas- discharge devices; gas-discharge laser pumping. SUBSTANCE: facility has continuous-treatment process space and high-frequency source in the form of distributed-gain amplifier incorporating controllable current supplies whose control inputs are connected to inputs of respective sections of low-frequency filters (grid line 1); output terminals of controllable current supplies 1 are connected to respective inputs of low-frequency filters connected in series to form anode line. Separate components (abode-line filter sections 6) are wound on outer walls of process-space insulating walls and form constant-pitch spiral. Uniform plasma is maintained in process space which improves quality of device treatment. EFFECT: reduced cost and power requirement, enhanced efficiency. 4 dwg