FIELD: technology of semiconductor materials and devices; for application of thin films of semiconductor joints and solid solutions on their base. SUBSTANCE: proposed device includes main quarts ampoules and two additional ampoules with whose help alloyed films are grown gaseous phases using two additional vapor sources: one with its own component and other with alloying admixture. Proposed device differs from prototype in availability of isolated chambers provided with holes where heaters may be located; main chamber has inner cavity with hole for placing the substrates. EFFECT: enhanced efficiency; increased productivity. 2 dwg
