CVD REACTOR FOR SYNTHESIS OF HETEROEPITAXIAL SILICON CARBIDE FILMS ON SILICON SUBSTRATES Russian patent published in 2022 - IPC C30B25/08 C30B25/14 C30B25/18 C30B29/36 C23C16/32 C23C16/455 

FIELD: physics.

SUBSTANCE: invention relates to semiconductor production equipment and can be used to form structures of sensors of physical quantities and converters of energy of beta radiation into an electrical form. CVD reactor for synthesis of heteroepitaxial silicon carbide films on silicon substrates by chemical vapor deposition includes inner quartz tube 1 with coaxially installed quartz outer tube 8, with placed inside two-zone, made of graphite, coated with silicon carbide, container 2 with substrate holders 4, induction-type heater 20 and a hydrogen supply/removal system 16, 15 as a carrier gas, wherein container 2 is mounted on hollow pedestal 6 directing the hydrogen flow to the first zone, between container 2 and pedestal 6 there is metal plate-disc 7 heated by the HF field of the inductor with holes for the passage of hydrogen flow, first zone of said container 2 along the path of carrier gas includes base 3 as a carbon source, is made without heat shields and is intended for hydrogen preheating and reaction of carbon with hydrogen in through channels of base 3 with subsequent transport transfer of obtained gaseous hydrocarbons into a second zone, including an assembly of substrate holders 4 with substrates and heat shields 5, note here that both zones are communicated via holes for transfer of hydrocarbons by hydrogen flow above silicon substrates. Holes in the substrate holders for the gas flow transition along the height of container 2 above the silicon substrates are located so that the silicon substrates do not overlap the holes in the substrate holders, wherein the holes of the next substrate holder are turned through 180° relative to the previous one.

EFFECT: presence in the reactor of a base as a carbon source makes it possible to exclude the supply of carbon-containing components into the reactor, which simplifies the design of the reactor; advantages of the reactor are also the supply of a single hydrogen carrier gas, simple maintenance due to easy disassembly of the reactor for cleaning from impurities, interchangeability of parts, which ensures repairability and reliability of the system as a whole.

6 cl, 11 dwg