FIELD: technology of production of semiconductor materials and devices. SUBSTANCE: charge for production of solid solutions of chalkogenides of lead and tin is prepared by way of synthesis of charge material from elements in melt, standard directed crystallization of melt, removal of part of ingot enriched with own excessive components and impurities, grinding and processing of re-sublimations in dynamic vacuum. Then homogenizing firing is conducted at constant temperature, fraction of grains with diameter of 200-500 μm is isolated and preliminary evaporation at temperature equal to evaporation temperature of growing of layers and crystals is carried out. All mentioned operations are needed in combination and are sufficient for realization of proposed process of preparation of charge to produce layers of chalkogenides of lead and tin with improved reproducibility of composition and electrophysical properties. EFFECT: improved reproducibility of composition and electrophysical properties of layers and crystals of solid solutions of chalkogenides of lead an tin. 1 dwg, 4 tbl
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Authors
Dates
2000-09-10—Published
1997-07-09—Filed