METHOD OF MEASURING CRYSTAL DIAMETER IN CRYSTAL GROWTH UNIT Russian patent published in 2001 - IPC

Abstract RU 2176689 C2

FIELD: crystal growth in crystal growth units. SUBSTANCE: method includes determination of position of boundary between crystal and melt by measuring device installed at an angle to melt. At the same time, position of boundary between crystal and melt is determined by means of other identical measuring device installed in plane running through axis if crystal rotation and axis of measuring device. Crystal diameter and melt level are calculated on basis of obtained data. EFFECT: higher reliability and accuracy of measurement of crystal diameter and concurrent determination of melt level. 1 dwg, 1 ex

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RU 2 176 689 C2

Authors

Kuznetsov S.A.

Zjubin V.E.

Bulavskij D.V.

Dates

2001-12-10—Published

1998-06-16—Filed